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| 2SB082020MAJL 2SB082020MAJL SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION O O O O O O 2SB082020MAJL is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits.; O Chip Size:830m X 830m; Chip Thickness: 21020m; Chip Topography and Dimensions La: Chip Size: 830m; Lb: Pad Size: 750m; O ORDERING SPECIFICATIONS Product Name 2SB082020MAJL Specification For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Maximum Operation Junction Temperature Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Ratings 20 1 40 150 -40~150 Unit V A A C C ELECTRICAL CHARACTERISTICS (Tamb=25C) Parameters Reverse Voltage Forward Voltage Symbol VBR VF1 VF2 Reverse Current IR1 IR2 Test Conditions Min. 20 ----Max. -0.530 0.595 10 1 Unit V V V A A IR=50 A IF=1A IF=2A VR=20V VR=10V HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.05.19 Page 1 of 1 |
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